February 10, 2018

Simon Li's 3D TCAD Simulation for Semiconductor Processes, Devices and PDF

By Simon Li

ISBN-10: 1461404800

ISBN-13: 9781461404804

ISBN-10: 1461404819

ISBN-13: 9781461404811

Technology computer-aided layout, or TCAD, is necessary to today’s semiconductor expertise and anyone operating during this must recognize whatever approximately TCAD. This ebook is ready tips to use software program to fabricate and attempt nearly semiconductor units in 3D. It brings to existence the subject of semiconductor equipment physics, with a hands-on, instructional method that de-emphasizes summary physics and equations and emphasizes genuine perform and huge illustrations. assurance features a accomplished library of units, representing the cutting-edge expertise, reminiscent of SuperJunction LDMOS, GaN LED units, etc.

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Extra resources for 3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics

Sample text

Sixfold conduction band valley in silicon, G-band in GaAs, light holes and heavy holes) are computed from well known formulas in quantum mechanics for a square quantum well [31] using a different effective mass and the appropriate confining potential for each parabolic band valley. When an external field is applied, we allow the quasi-Fermi level to vary as a function of distance. The density of states and quantum levels are assumed to be the same as if there were no applied field. Such a flat-band, parabolic has the advantage of having to compute the quantization effect once only in a simulation.

Similarly, we can define a quantity v which is equivalent to the Poisson’s ratio; in the case of a Newtonian fluid, we will refer to such a ratio as the compressibility. Please note that a Newtonian fluid is more general case of the familiar NavierStokes equation. 40) The Stokes hypothesis states that l þ 2m 3 ¼ 0 and therefore, the local mean pressure is equal to the thermal dynamic pressure. 41) The stress tensor in a Newtonian fluid can be written as: ð0Þ sij À sij ¼ 2meij þ ldij eii 2 ¼ 2m eij À dij eii 3 !

The bulk recombination is the same process described for vacancies in the previous section. Like vacancies, interstitial defects obey a flux balance boundary condition, as described by Hu [14]: ! 8) Where * n is the surface normal, KI is the surface recombination constant, and g is the generation, if any, at the surface. 3 Active Impurities Some dopants diffuse only when they are activated and the diffusion equation depends on the activated concentration of the impurities. Here activation is used to describe how well the impurity atoms are incorporated into the host lattice.

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3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics by Simon Li


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