February 10, 2018

Gerhard P. Willeke, Eicke R. Weber's Advances in Photovoltaics: Part 3, PDF

By Gerhard P. Willeke, Eicke R. Weber

ISBN-10: 0123884179

ISBN-13: 9780123884176

ISBN-10: 1211211231

ISBN-13: 9781211211232

This quantity is the 3rd of a suite of 7 with regards to photovoltaics. sun cell-related applied sciences lined the following contain: ribbon silicon; heterojunction crystalline silicon; wafer an identical crystalline silicon; and different complex silicon sun phone buildings and processes.

Semiconductors and Semimetals has wonderful itself in the course of the cautious choice of famous authors, editors, and participants. initially well known because the "Willardson and Beer" sequence, it has succeeded in publishing a number of landmark volumes and chapters. The sequence publishes well timed, hugely proper volumes meant for long term influence and reflecting the actually interdisciplinary nature of the sphere. The volumes in Semiconductors and Semimetals were and should stay of significant curiosity to physicists, chemists, fabrics scientists, and gadget engineers in academia, medical laboratories and sleek industry.

  • Written and edited by means of across the world popular experts
  • Relevant to a large readership: physicists, chemists, fabrics scientists, and gadget engineers in academia, medical laboratories and glossy industry

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2010). Hereby, the ink is deposited only in the areas where the screen-printed front contact is located afterward. In the subsequent P diffusion step a lowly doped emitter is realized in the uncovered areas (80–100 Ω/sq) whereas the areas with the highly doped Si nanoparticles serve for contacting (30–50 Ω/sq). This technology adds only one additional step to the cell process prior to P diffusion (see Fig. 19). , 2009). Structuring of the SiO2 is done via laser ablation of the areas where the contacts are formed afterward.

Structuring of the SiO2 is done via laser ablation of the areas where the contacts are formed afterward. A wet chemical etching step removes the damage induced by the laser. The heavily doped region (300 μm wide) exhibits a sheet resistance of 45 Ω/sq and the masked area 110 Ω/sq. This technology offers a certain degree of freedom in emitter formation and uses technologies already established in PV. , 2010). 19 Standard processing scheme for homogeneous emitter solar cells (right), with extra steps to be added for various selective emitter (SE) approaches.

27) followed by etching of the SiO2 3SiO2 + 18HF ! 28) Afterward, the thin porous Si layer at the surface is etched off in (cold) KOH. The remaining reflectivity is significantly higher than for random pyramids, therefore it is not used for mono-Si (Fig. 11). , 2004; Neuhaus and Mu¨nzer, 2007). 10 SEM images of textured c-Si surfaces for mono-Si using KOH/IPA (left) and mc-Si using an acidic texture solution (right). 11 Reflectivity of bare Si and alkaline-textured mono-Si with and without SiNx:H ARC.

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Advances in Photovoltaics: Part 3, by Gerhard P. Willeke, Eicke R. Weber


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